Influence of the transistor seat capacitance on its immunity to electrostatic discharge

The paper presents an assessment of the resistance field-effect transistors to effects electrostatic discharge. It is made for two different types conductivity, IRFZ46N and IRF4905 SPbF, in TO-220 TO-263 packages, with without taking into account seat capacitance. Analytical quasi-static models transistor package seats are presented, their help, analysis intrinsic mutual capacitances carried out allowance solder layer. showed that layer on electrodes increases gate-source drain-source capacitance by 1.7 times 2.2 SPbF transistor. Based calculated capacitances, a circuit model was created, packages A presented assessing discharge simulator. An results simulating experiments capacitance, layer, has significant effect breakdown voltage gate dielectric when exposed shown critical amplitudes performance package, seat, 3.05 4.75 kV, these values higher 0.2-0.25 kV. comparison simulation experimental difference no more than 2%.